Silane Coupling제로 표면 처리된 ATO 나노입자를 이용하여 제조된 대전방지 ATO/EPOXY 복합체의 코팅 물성
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 유요한 | - |
dc.contributor.author | 김태영 | - |
dc.contributor.author | 김종은 | - |
dc.contributor.author | 서광석 | - |
dc.date.accessioned | 2021-09-09T15:04:47Z | - |
dc.date.available | 2021-09-09T15:04:47Z | - |
dc.date.issued | 2008 | - |
dc.identifier.issn | 1226-7945 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/125111 | - |
dc.description.abstract | For purpose of anti-static film remaining unchanged in the condition of 160℃, organic solvent, acid and base solution 0.01∼0.03 m particles of Sb doped tin oxide(ATO) were grafted by 3-Glycidyloxypropyltrimethoxysilane(GPTS) for improving interfere bonding force between ATO and epoxy resin. The particles were dispersed in 2-methoxyethanol with YD-128(Bisphenol A type epoxy resin, Kukdo chemical) and 1-imidazole as hardener. The anti-static solutions were coated on PI film as thickness of 0.1 m. Surface resistivity of anti-static film containing conductive polymer became 10¹² Ω/ after 32 hours in 160 ℃. The surface resistivity of ATO grafted by GPTS / Epoxy coating layer remained as 107.6 Ω/ in 160 ℃ for 7 days. ATO grafted by GPTS / Epoxy coating layer coated on PI film was dipped in acetone for 7 days. The surface resistivity remained unchanged as 107.6 Ω/. The anti-static layer dipped in water solutions containing each KOH 10 wt % and H₂SO₄2 wt% was ultra-sonicated for 10 minutes per once until 30th. The surface resistance of anti-static layer containing ATO grafted by GPTS remained unchanged. | - |
dc.format.extent | 7 | - |
dc.language | 한국어 | - |
dc.language.iso | KOR | - |
dc.publisher | 한국전기전자재료학회 | - |
dc.title | Silane Coupling제로 표면 처리된 ATO 나노입자를 이용하여 제조된 대전방지 ATO/EPOXY 복합체의 코팅 물성 | - |
dc.title.alternative | Properties of Static Dissipative Epoxy Composites Loaded with Silane Coupled-ATO Nanoparticles | - |
dc.type | Article | - |
dc.publisher.location | 대한민국 | - |
dc.identifier.bibliographicCitation | 전기전자재료학회논문지, v.21, no.4, pp 388 - 394 | - |
dc.citation.title | 전기전자재료학회논문지 | - |
dc.citation.volume | 21 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 388 | - |
dc.citation.endPage | 394 | - |
dc.identifier.kciid | ART001233812 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordAuthor | ATO | - |
dc.subject.keywordAuthor | Anti-static | - |
dc.subject.keywordAuthor | Epoxy | - |
dc.subject.keywordAuthor | 3-Glycidyloxypropyltrimethoxysilane | - |
dc.subject.keywordAuthor | Heat resistance | - |
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