Effects of postmetallization oxygen annealing on electrical properties of 25 nm thick amorphous BaSm(2)Ti(4)O(12) film
DC Field | Value | Language |
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dc.contributor.author | Jeong, Young Hun | - |
dc.contributor.author | Paik, Jong Hoo | - |
dc.contributor.author | Lee, Young Jin | - |
dc.contributor.author | Nahm, Sahn | - |
dc.date.accessioned | 2021-09-09T16:23:48Z | - |
dc.date.available | 2021-09-09T16:23:48Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2008 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/125507 | - |
dc.description.abstract | The effects of postmetallization oxygen annealing on the electrical properties of a 25 nm thick amorphous BaSm(2)Ti(4)O(12) (BSmT) thin film have been investigated. The radio frequency sputtered BSmT film was well-developed on a TiN/SiO(2)/Si substrate. A BSmT film that was postmetallization-annealed at 20 Torr oxygen pressure exhibited a high capacitance density of 10.5 fF/mu m(2) at 100 kHz. It still showed a high capacitance density of 9.2 fF/mu m(2) and a high Q value of 67, even at 1.0 GHz, along with a relatively high k of 30. Its leakage current density was significantly improved to 8.9 nA/cm(2) at +2.0 V, and the conduction mechanism is considered to be a Poole-Frenkel mechanism. In addition, better quadratic voltage and temperature coefficients of capacitance were obtained, which were as low as approximately 169 ppm/V(2) and 76 ppm/degrees C, respectively, at 100 kHz. Therefore, it is thought that the oxygen during the annealing process significantly improves the electrical properties of the BSmT films for high-performance metal-insulator-metal capacitors. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | SR)TIO3/PT CAPACITORS | - |
dc.subject | MIM CAPACITORS | - |
dc.subject | PT/(BA | - |
dc.title | Effects of postmetallization oxygen annealing on electrical properties of 25 nm thick amorphous BaSm(2)Ti(4)O(12) film | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Nahm, Sahn | - |
dc.identifier.doi | 10.1149/1.2966215 | - |
dc.identifier.scopusid | 2-s2.0-51849128294 | - |
dc.identifier.wosid | 000258976500053 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.10, pp.G214 - G217 | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 155 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | G214 | - |
dc.citation.endPage | G217 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.subject.keywordPlus | SR)TIO3/PT CAPACITORS | - |
dc.subject.keywordPlus | MIM CAPACITORS | - |
dc.subject.keywordPlus | PT/(BA | - |
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