CRYPTO BASED EPC C1G2 UHF (860 MHz-960 MHz) PASSIVE RFID TAG CHIP
DC Field | Value | Language |
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dc.contributor.author | Kang, Hee-Bok | - |
dc.contributor.author | Hong, Suk-Kyoung | - |
dc.contributor.author | Song, Yong-Wook | - |
dc.contributor.author | Sung, Man Young | - |
dc.contributor.author | Choi, Bok-Gil | - |
dc.contributor.author | Chung, Jinyong | - |
dc.contributor.author | Lee, Jong-Wook | - |
dc.date.accessioned | 2021-09-09T16:25:29Z | - |
dc.date.available | 2021-09-09T16:25:29Z | - |
dc.date.issued | 2008 | - |
dc.identifier.issn | 1058-4587 | - |
dc.identifier.issn | 1607-8489 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/125516 | - |
dc.description.abstract | The metal-ferroelectric-metal (MFM) capacitor in ferroelectric random access memory (FeRAM) security embedded RFID chip is used not only in the memory cell region but also used in the analog and digital circuit area for low cost capacitance device and high security algorithm. MFM based security FeRAM braces for a wide range of security threats such as reverse engineering, cloning, and tampering. High security performance solution of on-chip FeRAM based register key is implemented to prepare against security attacking. RF transferring sensitivity properties with MFM capacitor are almost same or better than that with poly-insulator-poly (PIP) capacitor and metal-insulator-metal (MIM), and MOS capacitor. The measured power consumption of FeRAM embedded RFID chip without crypto processor engine is about 10 W with the write sensitivity of -18dBm. | - |
dc.format.extent | 12 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.title | CRYPTO BASED EPC C1G2 UHF (860 MHz-960 MHz) PASSIVE RFID TAG CHIP | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1080/10584580802543292 | - |
dc.identifier.wosid | 000261765400022 | - |
dc.identifier.bibliographicCitation | INTEGRATED FERROELECTRICS, v.100, pp 216 - 227 | - |
dc.citation.title | INTEGRATED FERROELECTRICS | - |
dc.citation.volume | 100 | - |
dc.citation.startPage | 216 | - |
dc.citation.endPage | 227 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordAuthor | security | - |
dc.subject.keywordAuthor | EPC | - |
dc.subject.keywordAuthor | UHF | - |
dc.subject.keywordAuthor | passive RFID tag | - |
dc.subject.keywordAuthor | FeRAM | - |
dc.subject.keywordAuthor | EEPROM | - |
dc.subject.keywordAuthor | MRAM | - |
dc.subject.keywordAuthor | PRAM | - |
dc.subject.keywordAuthor | MFM | - |
dc.subject.keywordAuthor | PIP | - |
dc.subject.keywordAuthor | MIM | - |
dc.subject.keywordAuthor | DES | - |
dc.subject.keywordAuthor | 3-DES | - |
dc.subject.keywordAuthor | electronic fuse | - |
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