Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN-based light emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Song, June-O | - |
dc.contributor.author | Hong, Hyun-Gi | - |
dc.contributor.author | Jeon, Joon-Woo | - |
dc.contributor.author | Sohn, Jung-Inn | - |
dc.contributor.author | Jang, Ja-Soon | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-09T16:26:31Z | - |
dc.date.available | 2021-09-09T16:26:31Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2008 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/125521 | - |
dc.description.abstract | We have investigated the Ag(1 nm)/indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600 degrees C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots. (c) 2007 The Electrochemical Society. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | LOW-RESISTANCE | - |
dc.subject | WORK FUNCTION | - |
dc.title | Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN-based light emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Hyun-Gi | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1149/1.2819536 | - |
dc.identifier.scopusid | 2-s2.0-37549023374 | - |
dc.identifier.wosid | 000251907400019 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.2, pp.H36 - H38 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | H36 | - |
dc.citation.endPage | H38 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | WORK FUNCTION | - |
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