AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons
DC Field | Value | Language |
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dc.contributor.author | Kim, Hong-Yeol | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Yun, Sang Pil | - |
dc.contributor.author | Kim, Kye Ryung | - |
dc.contributor.author | Anderson, Travis J. | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Pearton, S. J. | - |
dc.date.accessioned | 2021-09-09T16:34:31Z | - |
dc.date.available | 2021-09-09T16:34:31Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2008 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/125561 | - |
dc.description.abstract | AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers were irradiated with high-energy (17 MeV) protons to doses up to 2 x 10(16) cm(-2). There was no significant degradation in dc electrical parameters such as drain-source current (I-DS) and extrinsic transconductance (gm) of the HEMTs up to a fluency of 7.2 x 10(13) protons/cm(2). At the highest dose of 2 x 10(16) protons/cm(2) there was a decrease of 43% in I-DS and a 29% decrease in g(m). The data are consistent with the introduction of defect centers in the HEMT structure by the high-energy protons leading to a reduction in carrier concentration and mobility in the two-dimensional electron gas channel. These results show that AlGaN/GaN HEMTs are attractive for space-based applications where high-energy proton fluxes are present. (C) 2008 The Electrochemical Society. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | HEMTS | - |
dc.subject | MGO | - |
dc.subject | DC | - |
dc.title | AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1149/1.2917256 | - |
dc.identifier.scopusid | 2-s2.0-44349193605 | - |
dc.identifier.wosid | 000256198900061 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.7, pp.H513 - H515 | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 155 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | H513 | - |
dc.citation.endPage | H515 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordPlus | MGO | - |
dc.subject.keywordPlus | DC | - |
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