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The study of the GaN micro-rod selective area growth morphology depends on the buffer layer by MOCVD

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dc.contributor.authorBYUN, Dong Jin-
dc.date.accessioned2021-09-16T07:50:45Z-
dc.date.available2021-09-16T07:50:45Z-
dc.date.created2021-09-14-
dc.date.issued2021-05-13-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/127184-
dc.publisher한국재료학회-
dc.titleThe study of the GaN micro-rod selective area growth morphology depends on the buffer layer by MOCVD-
dc.title.alternativeThe study of the GaN micro-rod selective area growth morphology depends on the buffer layer by MOCVD-
dc.typeConference-
dc.contributor.affiliatedAuthorBYUN, Dong Jin-
dc.identifier.bibliographicCitation2021년도 한국재료학회 춘계학술대회-
dc.relation.isPartOf2021년도 한국재료학회 춘계학술대회-
dc.relation.isPartOf2021년도 한국재료학회 춘계학술대회-
dc.citation.title2021년도 한국재료학회 춘계학술대회-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2021-05-13-
dc.type.rimsCONF-
dc.description.journalClass2-
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공과대학 (신소재공학부)
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