Low-temperature high-performance In-Ga-Sn-O thin-film transistors with Al2O3 grown by a facile dual-atomic layer deposition
DC Field | Value | Language |
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dc.contributor.author | Jang, Hyunjae | - |
dc.contributor.author | Oh, Changyong | - |
dc.contributor.author | Kim, Tae Hyun | - |
dc.contributor.author | Kim, Hyeong Wook | - |
dc.contributor.author | Lee, Sang Ik | - |
dc.contributor.author | Kim, Bo Sung | - |
dc.date.accessioned | 2021-11-16T10:40:59Z | - |
dc.date.available | 2021-11-16T10:40:59Z | - |
dc.date.created | 2021-08-30 | - |
dc.date.issued | 2021-09-15 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/127626 | - |
dc.description.abstract | Top gate In-Ga-Sn-O (IGTO) thin-film transistors were fabricated with aluminum oxides (Al2O3) as gate insulators at a low temperature of 150 degrees C. Threshold voltage (V-th) of IGTO TFTs with Al2O3 grown by plasmaenhanced atomic layer deposition (PEALD) increased from -5.2 to 11.5 V with increasing plasma power from 70 to 200 W. However, IGTO TFTs with Al2O3 grown by thermal ALD showed a conductor-like behavior. By adjusting dual-deposition cycle ratio of Al2O3 layer using a sequential process of PEALD and thermal ALD at 150 degrees C, IGTO TFTs exhibited excellent electrical characteristics, with as field-effect mobility of 36.7 cm(2) V-1 s(-1), a V-th of -0.5 V, and a subthreshold slope of 0.18 Vdec(-1) along with large improvement of electrical stability for gate bias stress. Results of analyses of secondary ion mass spectrometry and X-ray photoelectron spectroscopy of IGTO thin films revealed that the performance and electrical stability of low-temperature IGTO TFTs were strongly dependent on the amount of hydroxyl groups and oxygen vacancies in IGTO semiconductors possibly attributed to passivation of oxygen-related defects by hydrogen and water molecules diffused into the IGTO layer during thermal ALD of Al2O3. (C) 2021 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | OXIDE SEMICONDUCTOR | - |
dc.subject | CARRIER TRANSPORT | - |
dc.subject | TFTS | - |
dc.title | Low-temperature high-performance In-Ga-Sn-O thin-film transistors with Al2O3 grown by a facile dual-atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Bo Sung | - |
dc.identifier.doi | 10.1016/j.jallcom.2021.160053 | - |
dc.identifier.scopusid | 2-s2.0-85104917275 | - |
dc.identifier.wosid | 000657529600005 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.875 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 875 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTOR | - |
dc.subject.keywordPlus | CARRIER TRANSPORT | - |
dc.subject.keywordPlus | TFTS | - |
dc.subject.keywordAuthor | In-Ga-Sn-O (IGTO) | - |
dc.subject.keywordAuthor | Thin-film transistor (TFT) | - |
dc.subject.keywordAuthor | Al2O3 | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Hydrogen diffusion | - |
dc.subject.keywordAuthor | Hydroxyl group | - |
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