Transparent and Unipolar Nonvolatile Memory Using 2D Vertically Stacked Layered Double Hydroxide
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Haein | - |
dc.contributor.author | Jeon, Chan-Woo | - |
dc.contributor.author | On, Ba Da | - |
dc.contributor.author | Park, Il-Kyu | - |
dc.contributor.author | Choi, Sanghyeon | - |
dc.contributor.author | Jang, Jingon | - |
dc.contributor.author | Wang, Gunuk | - |
dc.date.accessioned | 2021-11-20T16:41:13Z | - |
dc.date.available | 2021-11-20T16:41:13Z | - |
dc.date.created | 2021-08-30 | - |
dc.date.issued | 2021-05 | - |
dc.identifier.issn | 2196-7350 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/128136 | - |
dc.description.abstract | Various 2D materials have received considerable attention as emerging nanoscale materials for low-power and high-performance electronic and optoelectronic device applications. Among these, layered double hydroxide (LDH)-based nanocomposites are promising materials because of their structural diversity and electronic functionality, which are suitable for photocatalysts, catalytic supports, and charge storage. Here, three Al-based LDHs using different divalent cations (Zn2+, Ni2+, and Co2+) are synthesized, and their electrical characteristics are investigated in the form of a two-terminal Pt/Al-based LDHs/fluorine-doped tin oxide junction structure. Only the ZnAl-LDH junction exhibits a distinct unipolar switching behavior with an ON-OFF ratio of approximate to 10(3) and transmittance of approximate to 87%; the other junctions (NiAl- and CoAl-LDHs) do not exhibit switching and possess relatively low transparency. This difference is attributed to the relatively vertically stacked ZnAl-LDH layer, which enables the formation of a switching filament through the vertical 2D layer and enhances transparency. The ZnAl-LDH junction has a relatively low trap energy (E-t) of approximate to 0.1 eV that can decrease the SET voltage as the temperature increases, which can be understood by trap-assisted space-charge-limited conduction with thermal-assisted electron excitation. This study sheds light on the potential use of transparent and self-organized vertical stacked ZnAl-LDH materials as resistive switching devices. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.title | Transparent and Unipolar Nonvolatile Memory Using 2D Vertically Stacked Layered Double Hydroxide | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Wang, Gunuk | - |
dc.identifier.doi | 10.1002/admi.202001990 | - |
dc.identifier.scopusid | 2-s2.0-85103057437 | - |
dc.identifier.wosid | 000632250000001 | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS INTERFACES, v.8, no.10 | - |
dc.relation.isPartOf | ADVANCED MATERIALS INTERFACES | - |
dc.citation.title | ADVANCED MATERIALS INTERFACES | - |
dc.citation.volume | 8 | - |
dc.citation.number | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | EVOLUTION | - |
dc.subject.keywordPlus | NANOSHEETS | - |
dc.subject.keywordPlus | FILAMENTS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | MG | - |
dc.subject.keywordPlus | AL | - |
dc.subject.keywordPlus | CO | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | layered double hydroxide& | - |
dc.subject.keywordAuthor | #8208 | - |
dc.subject.keywordAuthor | based nanocomposites | - |
dc.subject.keywordAuthor | transparent memory | - |
dc.subject.keywordAuthor | unipolar switching memory | - |
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