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Enhanced Weak-Light Detection of Perovskite Photodetectors through Perovskite/Hole-Transport Material Interface Treatment

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dc.contributor.authorLee, David Sunghwan-
dc.contributor.authorHeo, Jin Hyuck-
dc.contributor.authorPark, Jin Kyoung-
dc.contributor.authorKim, Bong Woo-
dc.contributor.authorLee, Hyong Joon-
dc.contributor.authorSong, Yun Mi-
dc.contributor.authorIm, Sang Hyuk-
dc.date.accessioned2021-11-21T14:40:17Z-
dc.date.available2021-11-21T14:40:17Z-
dc.date.created2021-08-30-
dc.date.issued2021-04-14-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/128243-
dc.description.abstractEnhancement in weak-light detection and other photodetection properties was observed for organic-inorganic halide perovskite photodetectors as a result of benzylammonium iodide (BzAI) treatment at the methylammonium lead triiodide (MAPbI(3)) and hole-transport layer (HTL) interface. After treatment, growth of the two-dimensional Ruddlesden-Popper perovskite phase was observed at the MAPbI(3) surface, which shifted the overall surface work function upwards and thus effectively facilitated charge transfer across the MAPbI(3)/HTL interface. As a result, the fully fabricated device with 10 mg/mL (BzAI/isopropanol) treatment exhibited shorter rise time (t(rise)) and decay time (t(decay)) of 53 and 38 mu s, respectively, compared to t(rise) and t(decay) of 214 and 120 mu s, respectively, for the pristine MAPbI(3) sample. In addition, the BzAI-treated device exhibited larger linearity compared to the pristine MAPbI(3) sample, demonstrating a high and stable specific detectivity of 1.49 x 10(13) to 2.14 x 10(13) Jones under incident light intensity of 10(-3) to 100 mW/cm(2), respectively.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER CHEMICAL SOC-
dc.subjectHALIDE PEROVSKITES-
dc.subjectOPTOELECTRONIC APPLICATIONS-
dc.subjectPERFORMANCE-
dc.subjectEFFICIENT-
dc.titleEnhanced Weak-Light Detection of Perovskite Photodetectors through Perovskite/Hole-Transport Material Interface Treatment-
dc.typeArticle-
dc.contributor.affiliatedAuthorIm, Sang Hyuk-
dc.identifier.doi10.1021/acsami.1c03610-
dc.identifier.scopusid2-s2.0-85104369722-
dc.identifier.wosid000641156600080-
dc.identifier.bibliographicCitationACS APPLIED MATERIALS & INTERFACES, v.13, no.14, pp.16775 - 16783-
dc.relation.isPartOfACS APPLIED MATERIALS & INTERFACES-
dc.citation.titleACS APPLIED MATERIALS & INTERFACES-
dc.citation.volume13-
dc.citation.number14-
dc.citation.startPage16775-
dc.citation.endPage16783-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusHALIDE PEROVSKITES-
dc.subject.keywordPlusOPTOELECTRONIC APPLICATIONS-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusEFFICIENT-
dc.subject.keywordAuthorperovskite photodetector-
dc.subject.keywordAuthorRuddlesden-Popper interfacial treatment-
dc.subject.keywordAuthorlow hysteresis-
dc.subject.keywordAuthorweak-light detection-
dc.subject.keywordAuthorwork function shift-
dc.subject.keywordAuthorefficient charge transfer-
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