Optimization of Ni/Ag-Based Reflectors to Improve the Performance of 273 nm Deep Ultraviolet AlGaN-Based Light Emitting Diodes
DC Field | Value | Language |
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dc.contributor.author | Sim, Kee-Baek | - |
dc.contributor.author | Kim, Su-Kyung | - |
dc.contributor.author | Lee, Hwa-Seub | - |
dc.contributor.author | Lee, Sang-Youl | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.contributor.author | Amano, Hiroshi | - |
dc.date.accessioned | 2021-11-21T19:41:02Z | - |
dc.date.available | 2021-11-21T19:41:02Z | - |
dc.date.created | 2021-08-30 | - |
dc.date.issued | 2021-04-01 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/128272 | - |
dc.description.abstract | We optimized Ni/Ag-based p-type reflectors for the improvement of efficiency of 273 nm deep ultraviolet (DUV) AlGaN-based flip-chip light emitting diodes (FCLEDs). The Ni(3 nm)/Ag(5-15 nm)/Al/Ni and Ni(25-50 nm)/Ag/Ni contacts exhibited higher reflectance (36.4-39.5%) at 273 nm than reference Ni(5 nm)/Au(5 nm)/Al/Ni contact (26.1%). The Ni(3 nm)/Ag/Al(200 nm)/Ni(20 nm) and Ni/Ag(200 nm)/Ni(20 nm)-based FCLEDs gave forward voltages in the rage of 6.93-7.11 V and 5.5-6.28 V at 20 mA, respectively, whereas the Ni/Au-based sample showed 6.35 V. Further, the Ni(3 nm)/Ag(10 nm)/Al/Ni-based and Ni(50 nm)/Ag(200 nm)/Ni-based samples exhibited 4.85% and 13.4% larger output power at 1.2 W than the reference sample. The Ni(3 nm)/Ag(10 nm)-based and Ni(50 nm)/Ag(200 nm)/Ni-based samples produced 5.6% and 8.5% higher peak external quantum efficiency than the reference sample. It was further shown that the Ni(3 nm)/Ag(10 nm)/Al/Ni-based and Ni(50 nm)/Ag(200 nm)/Ni-based samples experienced less efficiency droop (namely, 27.9 and 26.4%, respectively) than the reference sample (31.4%). Based on the scanning transmission electron microscopy and X-ray photoemission spectroscopy results, the ohmic formation mechanism is described and discussed. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Optimization of Ni/Ag-Based Reflectors to Improve the Performance of 273 nm Deep Ultraviolet AlGaN-Based Light Emitting Diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1149/2162-8777/abf49b | - |
dc.identifier.scopusid | 2-s2.0-85104692307 | - |
dc.identifier.wosid | 000641987900001 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.10, no.4 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 10 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | OHMIC CONTACT FORMATION | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | UV-LEDS | - |
dc.subject.keywordPlus | AG | - |
dc.subject.keywordPlus | INACTIVATION | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | THICKNESS | - |
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