Improved Reliability of 278 nm Deep Ultraviolet AlGaN-Based Flip-Chip Light Emitting Diodes by Using ITO/Al Contact
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yum, Woong-Sun | - |
dc.contributor.author | Lee, Sang-Youl | - |
dc.contributor.author | Lim, Hyun-Soo | - |
dc.contributor.author | Choi, Rak-Jun | - |
dc.contributor.author | Oh, Jeong-Tak | - |
dc.contributor.author | Jeong, Hwan-Hee | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-11-21T20:40:37Z | - |
dc.date.available | 2021-11-21T20:40:37Z | - |
dc.date.created | 2021-08-30 | - |
dc.date.issued | 2021-04-01 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/128275 | - |
dc.description.abstract | We investigated the electrical and optical performance and reliability of 278 nm deep ultraviolet (DUV) AlGaN-based flip-chip light-emitting diodes (FCLEDs) fabricated with ITO/Al and reference Ni/Au contacts. The DUV FCLEDs with the Ni/Au and ITO/Al contacts yielded forward voltages of 6.52 and 6.65 V at 50 A cm(-2) and light output of 6.36 and 10.06 mW at 50 A cm(-2), respectively. The ITO/Al-based FCLEDs produced higher Wall plug efficiency (WPE) (3.04% at 50 A cm(-2)) than the Ni/Au-based samples (1.96%). The ITO/Al-based FCLEDs revealed 55% higher WPE at 50 A cm(-2) than the Ni/Au-based sample. For both of the samples, the output power decreased with increasing operation time at 100 A cm(-2). For example, after 2000 h, the Ni/Au and ITO/Al-based FCLEDs showed a reduction in the output power by 37% and 22%, respectively. Despite the good output characteristics, the ITO/Al contact-based FCLEDs exhibited higher forward bias voltages than the Ni/Au-based sample. Based on the energy dispersive X-ray spectroscopy (EDS) depth profiles, high-angle annular dark field (HAADF), and electron energy loss spectroscopy (EELS) results, reason for the increase in the forward voltage of ITO/Al-based FCLEDs is described and discussed. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Improved Reliability of 278 nm Deep Ultraviolet AlGaN-Based Flip-Chip Light Emitting Diodes by Using ITO/Al Contact | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1149/2162-8777/abf0e9 | - |
dc.identifier.scopusid | 2-s2.0-85104764832 | - |
dc.identifier.wosid | 000639552800001 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.10, no.4 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 10 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Deep ultraviolet light-emitting diode | - |
dc.subject.keywordAuthor | AlGaN contact layer | - |
dc.subject.keywordAuthor | ITO | - |
dc.subject.keywordAuthor | Al | - |
dc.subject.keywordAuthor | Ni | - |
dc.subject.keywordAuthor | Au | - |
dc.subject.keywordAuthor | contact | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.