Improving Emission Uniformity of InGaN/GaN-Based Vertical LEDs by Using Reflective ITO/Ag n-Contact
DC Field | Value | Language |
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dc.contributor.author | Yum, Woong-Sun | - |
dc.contributor.author | Koo, Ji-Hyun | - |
dc.contributor.author | Lee, Dae-Hee | - |
dc.contributor.author | Kim, Young-Hoon | - |
dc.contributor.author | Jeong, Young-Kyu | - |
dc.contributor.author | Jung, Se-Yeon | - |
dc.contributor.author | Lee, Sang-Youl | - |
dc.contributor.author | Jeong, Hwan-Hee | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-11-22T04:00:17Z | - |
dc.date.available | 2021-11-22T04:00:17Z | - |
dc.date.created | 2021-08-30 | - |
dc.date.issued | 2021-04 | - |
dc.identifier.issn | 2079-9292 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/128312 | - |
dc.description.abstract | We investigated the effect of Ti/Al and ITO/Ag n-type contacts on the emission uniformity and light output of different chip-size vertical-geometry light-emitting diodes (VLEDs) for vehicle headlamp application. The forward voltage of the Ti/Al-based reference VLEDs decreased from 3.38 to 3.20 V at 1500 mA with increasing chip size from (1280 x 1000 mu m(2)) to (1700 x 1700 mu m(2)), whereas that of the ITO/Ag-based samples changed from 3.37 to 3.15 V. Regardless of chip size, the ITO/Ag-based samples revealed higher light output power than the reference samples. For example, the ITO/Ag-based samples (chip size of 1700 x 1700 mu m(2)) exhibited 3.4% higher light output power at 1500 mA than the reference samples. The ITO/Ag samples underwent less degradation in the Wall-plug efficiency (WPE) than the reference sample. For instance, the ITO/Ag-based samples (1700 x 1700 mu m(2)) gave 4.8% higher WPE at 1500 mA than the reference samples. The ITO/Ag-based samples illustrated more uniform emission than the Ti/Al-based sample. Both the reference and ITO/Ag-based samples underwent no degradation when operated at 1500 mA for 1000 h. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.title | Improving Emission Uniformity of InGaN/GaN-Based Vertical LEDs by Using Reflective ITO/Ag n-Contact | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.3390/electronics10080975 | - |
dc.identifier.scopusid | 2-s2.0-85104419355 | - |
dc.identifier.wosid | 000643992400001 | - |
dc.identifier.bibliographicCitation | ELECTRONICS, v.10, no.8 | - |
dc.relation.isPartOf | ELECTRONICS | - |
dc.citation.title | ELECTRONICS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Information Systems | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | light emitting diode | - |
dc.subject.keywordAuthor | InGaN | - |
dc.subject.keywordAuthor | reflector | - |
dc.subject.keywordAuthor | ohmic contact | - |
dc.subject.keywordAuthor | ITO/Ag | - |
dc.subject.keywordAuthor | vertical geometry | - |
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