Design of Ga2O3 modulation doped field effect transistors
- Authors
- Mastro, Michael A.; Tadjer, Marko J.; Kim, Jihyun; Ren, Fan; Pearton, Stephen J.
- Issue Date
- 3월-2021
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.39, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 39
- Number
- 2
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/128514
- DOI
- 10.1116/6.0000825
- ISSN
- 0734-2101
- Abstract
- The design of beta -Ga2O3-based modulation-doped field effect transistors is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of the electron mobility as well as temperature- and orientation-dependent approximations of the thermal conductivity of beta -Ga2O3 are presented. A decrease in drain current was attributed to a position-dependent mobility reduction caused by a coupled self-heating mechanism and a high electric-field mobility reduction mechanism. A simple thermal management solution is presented where heat is extracted through the source contact metal. Additionally, it is shown that an undesired secondary channel can form at the modulation-doped layer that is distinguished by an inflection in the transconductance curve.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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