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The development of SiO2 hole pattern fabrication using photoresist without etching for the selective area growth of GaNThe development of SiO2 hole pattern fabrication using photoresist without etching for the selective area growth of GaN
- Alternative Title
- The development of SiO2 hole pattern fabrication using photoresist without etching for the selective area growth of GaN
- Authors
- BYUN, Dong Jin
- Issue Date
- 25-11월-2021
- Publisher
- 한국재료학회
- Citation
- 2021년도 한국재료학회 추계학술대회
- Conference Name
- 2021년도 한국재료학회 추계학술대회
- Place
- KO
- Conference Date
- 2021-11-24
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