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Controllable SiOx Nanorod Memristive Neuron for Probabilistic Bayesian Inference

Authors
Choi, SanghyeonKim, Gwang SuYang, JehyeonCho, HaeinKang, Chong-YunWang, Gunuk
Issue Date
1월-2022
Publisher
WILEY-V C H VERLAG GMBH
Keywords
artificial neurons; memristors; nanorods; neuromorphic computing; probabilistic neural networks; silicon oxide
Citation
ADVANCED MATERIALS, v.34, no.1
Indexed
SCIE
SCOPUS
Journal Title
ADVANCED MATERIALS
Volume
34
Number
1
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/135305
DOI
10.1002/adma.202104598
ISSN
0935-9648
Abstract
Modern artificial neural network technology using a deterministic computing framework is faced with a critical challenge in dealing with massive data that are largely unstructured and ambiguous. This challenge demands the advances of an elementary physical device for tackling these uncertainties. Here, we designed and fabricated a SiOx nanorod memristive device by employing the glancing angle deposition (GLAD) technique, suggesting a controllable stochastic artificial neuron that can mimic the fundamental integrate-and-fire signaling and stochastic dynamics of a biological neuron. The nanorod structure provides the random distribution of multiple nanopores all across the active area, capable of forming a multitude of Si filaments at many SiOx nanorod edges after the electromigration process, leading to a stochastic switching event with very high dynamic range (approximate to 5.15 x 10(10)) and low energy (approximate to 4.06 pJ). Different probabilistic activation (ProbAct) functions in a sigmoid form are implemented, showing its controllability with low variation by manufacturing and electrical programming schemes. Furthermore, as an application prospect, based on the suggested memristive neuron, we demonstrated the self-resting neural operation with the local circuit configuration and revealed probabilistic Bayesian inferences for genetic regulatory networks with low normalized mean squared errors (approximate to 2.41 x 10(-2)) and its robustness to the ProbAct variation.
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