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Phase-separated indenofluorene arrays stabilized by hydrogen and halogen bonds on Au(111)

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dc.contributor.authorPark, Jong Hwan-
dc.contributor.authorChang, Min Hui-
dc.contributor.authorJang, Won Jun-
dc.contributor.authorHan, Seungwu-
dc.contributor.authorKahng, Se-Jong-
dc.date.accessioned2022-02-11T09:41:04Z-
dc.date.available2022-02-11T09:41:04Z-
dc.date.created2022-01-20-
dc.date.issued2022-01-
dc.identifier.issn0734-2101-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/135323-
dc.description.abstractIndenofluorene, which consists of a 6-5-6-5-6 fused-ring structure, is a semiconducting molecule with possible applications in optoelectronic devices. Bulk crystal structures, molecular front orbitals, and on-surface polymerized indenofluorene have recently been studied, but self-assembled structures on the surface have not yet been reported. Here, we report the array structure of 2,8-dibromoindeno[1,2-b]fluorene-6,12-dione on Au(111) studied using scanning tunneling microscopy. We proposed an alternating-tread stair structure as the molecular model for the monolayer molecular islands, which show strong shape anisotropy. The model can be explained by four O...H hydrogen bonds and one Br...Br halogen bond per molecule, as supported by density functional theory calculations. Although they prefer intermixed heteroprochiral structures in bulk layers, our study shows that these molecules can form phase-separated homoprochiral structures on the surface, leading to potential applications in molecular chiral separation.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherA V S AMER INST PHYSICS-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectNETWORKS-
dc.subjectMOLECULES-
dc.subjectDESIGN-
dc.titlePhase-separated indenofluorene arrays stabilized by hydrogen and halogen bonds on Au(111)-
dc.typeArticle-
dc.contributor.affiliatedAuthorKahng, Se-Jong-
dc.identifier.doi10.1116/6.0001345-
dc.identifier.scopusid2-s2.0-85120641079-
dc.identifier.wosid000726886200005-
dc.identifier.bibliographicCitationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.40, no.1-
dc.relation.isPartOfJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-
dc.citation.titleJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-
dc.citation.volume40-
dc.citation.number1-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Coatings & Films-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusNETWORKS-
dc.subject.keywordPlusMOLECULES-
dc.subject.keywordPlusDESIGN-
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