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Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells (vol 868, 159211, 2021)

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dc.contributor.authorPolyakov, A. Y.-
dc.contributor.authorAlexanyan, L. A.-
dc.contributor.authorSkorikov, M. L.-
dc.contributor.authorChernykh, A. V.-
dc.contributor.authorShchemerov, I. V.-
dc.contributor.authorMurashev, V. N.-
dc.contributor.authorKim, Tae-Hwan-
dc.contributor.authorLee, In-Hwan-
dc.contributor.authorPearton, S. J.-
dc.date.accessioned2022-02-11T20:41:20Z-
dc.date.available2022-02-11T20:41:20Z-
dc.date.created2022-02-09-
dc.date.issued2021-12-25-
dc.identifier.issn0925-8388-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/135383-
dc.description.abstractThe authors regret author In-Hwan Lee's affiliation was incorrectly shown in the original version. The authors would like to apologise for any inconvenience caused. https://doi.org/10.1016/j.jallcom.2021.159211. © 2021 Elsevier B.V.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.titlePost dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells (vol 868, 159211, 2021)-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, In-Hwan-
dc.identifier.doi10.1016/j.jallcom.2021.161947-
dc.identifier.scopusid2-s2.0-85116264906-
dc.identifier.wosid000711165300001-
dc.identifier.bibliographicCitationJOURNAL OF ALLOYS AND COMPOUNDS, v.888-
dc.relation.isPartOfJOURNAL OF ALLOYS AND COMPOUNDS-
dc.citation.titleJOURNAL OF ALLOYS AND COMPOUNDS-
dc.citation.volume888-
dc.type.rimsART-
dc.type.docTypeCorrection-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaMetallurgy & Metallurgical Engineering-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryMetallurgy & Metallurgical Engineering-
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공과대학 (신소재공학부)
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