Characterization of MOCVD-Prepared CIS Solar Cells
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Seung Hoon | - |
dc.contributor.author | Lee, Gyu Hyun | - |
dc.contributor.author | Lee, Hae-Seok | - |
dc.contributor.author | Kim, Donghwan | - |
dc.contributor.author | Kang, Yoonmook | - |
dc.date.accessioned | 2022-02-16T07:41:38Z | - |
dc.date.available | 2022-02-16T07:41:38Z | - |
dc.date.created | 2022-01-19 | - |
dc.date.issued | 2021-11 | - |
dc.identifier.issn | 1996-1073 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/135955 | - |
dc.description.abstract | Chalcopyrite Cu(In,Ga)Se-2 (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because of their effectiveness and potential for reducing production costs through large-scale production. However, research on MOCVD-prepared solar cells is progressing slower than that on other types of solar cells, primarily because the preparation of CuInSe2 (CIS)-based films via MOCVD is relatively more sophisticated. In this study, we analyzed CIS solar cells prepared via three-stage MOCVD and processed with relatively simple precursors and techniques. We achieved an energy-conversion efficiency of 7.39% without applying a buffer layer. Instead, we applied a Cu-deficient layer to create a buried pn junction. Ultimately, we demonstrated that the fabrication of fully-MOCVD-processed CIS photovoltaic devices is feasible. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.subject | THIN-FILMS | - |
dc.subject | CUINSE2 | - |
dc.subject | CU(IN | - |
dc.title | Characterization of MOCVD-Prepared CIS Solar Cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Hae-Seok | - |
dc.contributor.affiliatedAuthor | Kang, Yoonmook | - |
dc.identifier.doi | 10.3390/en14227721 | - |
dc.identifier.scopusid | 2-s2.0-85119670124 | - |
dc.identifier.wosid | 000725331400001 | - |
dc.identifier.bibliographicCitation | ENERGIES, v.14, no.22 | - |
dc.relation.isPartOf | ENERGIES | - |
dc.citation.title | ENERGIES | - |
dc.citation.volume | 14 | - |
dc.citation.number | 22 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Energy & Fuels | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
dc.subject.keywordPlus | CU(IN | - |
dc.subject.keywordPlus | CUINSE2 | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordAuthor | CIGS solar cell | - |
dc.subject.keywordAuthor | EBIC | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | MOCVD-prepared CIGS | - |
dc.subject.keywordAuthor | buried junction | - |
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