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Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing

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dc.contributor.authorKwon, Ki Chang-
dc.contributor.authorBaek, Ji Hyun-
dc.contributor.authorHong, Kootak-
dc.contributor.authorKim, Soo Young-
dc.contributor.authorJang, Ho Won-
dc.date.accessioned2022-02-22T08:41:51Z-
dc.date.available2022-02-22T08:41:51Z-
dc.date.created2022-02-15-
dc.date.issued2022-02-
dc.identifier.issn2311-6706-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/136479-
dc.description.abstractTwo-dimensional (2D) transition metal chalcogenides (TMC) and their heterostructures are appealing as building blocks in a wide range of electronic and optoelectronic devices, particularly futuristic memristive and synaptic devices for brain-inspired neuromorphic computing systems. The distinct properties such as high durability, electrical and optical tunability, clean surface, flexibility, and LEGO-staking capability enable simple fabrication with high integration density, energy-efficient operation, and high scalability. This review provides a thorough examination of high-performance memristors based on 2D TMCs for neuromorphic computing applications, including the promise of 2D TMC materials and heterostructures, as well as the state-of-the-art demonstration of memristive devices. The challenges and future prospects for the development of these emerging materials and devices are also discussed. The purpose of this review is to provide an outlook on the fabrication and characterization of neuromorphic memristors based on 2D TMCs.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherSHANGHAI JIAO TONG UNIV PRESS-
dc.subjectPAIRED-PULSE FACILITATION-
dc.subjectPHASE-TRANSITION-
dc.subjectSYNAPTIC PLASTICITY-
dc.subjectMOS2 NANOSHEETS-
dc.subjectFERROELECTRICITY-
dc.subjectSYNAPSES-
dc.subject1T-
dc.subjectMONOLAYER-
dc.subjectINPLANE-
dc.subjectNETWORK-
dc.titleMemristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Soo Young-
dc.identifier.doi10.1007/s40820-021-00784-3-
dc.identifier.scopusid2-s2.0-85124413510-
dc.identifier.wosid000751610200001-
dc.identifier.bibliographicCitationNANO-MICRO LETTERS, v.14, no.1-
dc.relation.isPartOfNANO-MICRO LETTERS-
dc.citation.titleNANO-MICRO LETTERS-
dc.citation.volume14-
dc.citation.number1-
dc.type.rimsART-
dc.type.docTypeReview-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusPAIRED-PULSE FACILITATION-
dc.subject.keywordPlusPHASE-TRANSITION-
dc.subject.keywordPlusSYNAPTIC PLASTICITY-
dc.subject.keywordPlusMOS2 NANOSHEETS-
dc.subject.keywordPlusFERROELECTRICITY-
dc.subject.keywordPlusSYNAPSES-
dc.subject.keywordPlus1T-
dc.subject.keywordPlusMONOLAYER-
dc.subject.keywordPlusINPLANE-
dc.subject.keywordPlusNETWORK-
dc.subject.keywordAuthorArtificial synapses-
dc.subject.keywordAuthorTransition metal chalcogenides-
dc.subject.keywordAuthorTwo-dimensional materials-
dc.subject.keywordAuthorMemristors-
dc.subject.keywordAuthorNeuromorphic computing-
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