Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, Ki Chang | - |
dc.contributor.author | Baek, Ji Hyun | - |
dc.contributor.author | Hong, Kootak | - |
dc.contributor.author | Kim, Soo Young | - |
dc.contributor.author | Jang, Ho Won | - |
dc.date.accessioned | 2022-02-22T08:41:51Z | - |
dc.date.available | 2022-02-22T08:41:51Z | - |
dc.date.created | 2022-02-15 | - |
dc.date.issued | 2022-02 | - |
dc.identifier.issn | 2311-6706 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/136479 | - |
dc.description.abstract | Two-dimensional (2D) transition metal chalcogenides (TMC) and their heterostructures are appealing as building blocks in a wide range of electronic and optoelectronic devices, particularly futuristic memristive and synaptic devices for brain-inspired neuromorphic computing systems. The distinct properties such as high durability, electrical and optical tunability, clean surface, flexibility, and LEGO-staking capability enable simple fabrication with high integration density, energy-efficient operation, and high scalability. This review provides a thorough examination of high-performance memristors based on 2D TMCs for neuromorphic computing applications, including the promise of 2D TMC materials and heterostructures, as well as the state-of-the-art demonstration of memristive devices. The challenges and future prospects for the development of these emerging materials and devices are also discussed. The purpose of this review is to provide an outlook on the fabrication and characterization of neuromorphic memristors based on 2D TMCs. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SHANGHAI JIAO TONG UNIV PRESS | - |
dc.subject | PAIRED-PULSE FACILITATION | - |
dc.subject | PHASE-TRANSITION | - |
dc.subject | SYNAPTIC PLASTICITY | - |
dc.subject | MOS2 NANOSHEETS | - |
dc.subject | FERROELECTRICITY | - |
dc.subject | SYNAPSES | - |
dc.subject | 1T | - |
dc.subject | MONOLAYER | - |
dc.subject | INPLANE | - |
dc.subject | NETWORK | - |
dc.title | Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Soo Young | - |
dc.identifier.doi | 10.1007/s40820-021-00784-3 | - |
dc.identifier.scopusid | 2-s2.0-85124413510 | - |
dc.identifier.wosid | 000751610200001 | - |
dc.identifier.bibliographicCitation | NANO-MICRO LETTERS, v.14, no.1 | - |
dc.relation.isPartOf | NANO-MICRO LETTERS | - |
dc.citation.title | NANO-MICRO LETTERS | - |
dc.citation.volume | 14 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Review | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PAIRED-PULSE FACILITATION | - |
dc.subject.keywordPlus | PHASE-TRANSITION | - |
dc.subject.keywordPlus | SYNAPTIC PLASTICITY | - |
dc.subject.keywordPlus | MOS2 NANOSHEETS | - |
dc.subject.keywordPlus | FERROELECTRICITY | - |
dc.subject.keywordPlus | SYNAPSES | - |
dc.subject.keywordPlus | 1T | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | INPLANE | - |
dc.subject.keywordPlus | NETWORK | - |
dc.subject.keywordAuthor | Artificial synapses | - |
dc.subject.keywordAuthor | Transition metal chalcogenides | - |
dc.subject.keywordAuthor | Two-dimensional materials | - |
dc.subject.keywordAuthor | Memristors | - |
dc.subject.keywordAuthor | Neuromorphic computing | - |
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