Crystal orientation dependence of deep level spectra in proton irradiated bulk beta-Ga2O3
DC Field | Value | Language |
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dc.contributor.author | Polyakov, A. Y. | - |
dc.contributor.author | Smirnov, N. B. | - |
dc.contributor.author | Shchemerov, I., V | - |
dc.contributor.author | Vasilev, A. A. | - |
dc.contributor.author | Kochkova, A., I | - |
dc.contributor.author | Chernykh, A., V | - |
dc.contributor.author | Lagov, P. B. | - |
dc.contributor.author | Pavlov, Yu S. | - |
dc.contributor.author | Stolbunov, V. S. | - |
dc.contributor.author | Kulevoy, T., V | - |
dc.contributor.author | Borzykh, I., V | - |
dc.contributor.author | Lee, In-Hwan | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Pearton, S. J. | - |
dc.date.accessioned | 2022-02-27T08:40:35Z | - |
dc.date.available | 2022-02-27T08:40:35Z | - |
dc.date.created | 2022-01-20 | - |
dc.date.issued | 2021-07-21 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/137113 | - |
dc.description.abstract | The effects of 20MeV proton irradiation with fluences of 5x10(14) and 10(15)p/cm(2) on electrical properties of lightly Sn doped n-type (net donor concentration 3x10(17)cm(-3)) bulk beta-Ga2O3 samples with (010) and (-201) orientation were studied. Proton irradiation decreases the net donor density with a removal rate close to 200cm(-1) for both orientations and similar to the electron removal rates in lightly Si doped beta-Ga2O3 epilayers. The main deep electron traps introduced in the beta-Ga2O3 crystals of both orientations are near E-c-0.45eV, while in Si doped films, the dominant centers were the so-called E2* (E-c-0.75eV) and E3 (E-c-0.1eV) traps. Deep acceptor spectra in our bulk -Ga2O3(Sn) crystals were dominated by the well-known centers with an optical ionization energy of near 2.3eV, often attributed to split Ga vacancies. These deep acceptors are present in a higher concentration and are introduced by protons at a higher rate for the (010) orientation. Another important difference between the two orientations is the introduction in the surface region (similar to 0.1 mu m from the surface) of the (010) of a very high density of deep acceptors with a level near E-c-0.27eV, not observed in high densities in the (-201) orientation or in Si doped epitaxial layers. The presence of these traps gives rise to a very pronounced hysteresis in the low temperature forward current-voltage characteristics of the (010) samples. These results are yet another indication of a significant impact of the orientation of the beta-Ga2O3 crystals on their properties, in this case, after proton irradiation. Published under an exclusive license by AIP Publishing. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AIP Publishing | - |
dc.subject | THERMAL-STABILITY | - |
dc.subject | SPECTROSCOPY | - |
dc.subject | DEUTERIUM | - |
dc.subject | HYDROGEN | - |
dc.subject | DAMAGE | - |
dc.title | Crystal orientation dependence of deep level spectra in proton irradiated bulk beta-Ga2O3 | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, In-Hwan | - |
dc.identifier.doi | 10.1063/5.0058555 | - |
dc.identifier.scopusid | 2-s2.0-85110480528 | - |
dc.identifier.wosid | 000694725100001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.130, no.3 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 130 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | DEUTERIUM | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | DAMAGE | - |
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