Effect of ALD- and PEALD- Grown Al2O3 Gate Insulators on Electrical and Stability Properties for a-IGZO Thin-Film Transistor
DC Field | Value | Language |
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dc.contributor.author | Park, Jungmin | - |
dc.contributor.author | Kim, Hyojung | - |
dc.contributor.author | Choi, Pyungho | - |
dc.contributor.author | Jeon, Bohyeon | - |
dc.contributor.author | Lee, Jongyoon | - |
dc.contributor.author | Oh, Changyong | - |
dc.contributor.author | Kim, Bosung | - |
dc.contributor.author | Choi, Byoungdeog | - |
dc.date.accessioned | 2022-02-28T09:42:33Z | - |
dc.date.available | 2022-02-28T09:42:33Z | - |
dc.date.created | 2022-02-09 | - |
dc.date.issued | 2021-07 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/137240 | - |
dc.description.abstract | This study investigated the electrical and stability characteristics of Al2O3 as a gate insulator, which was deposited by various atomic layer deposition methods in top-gate staggered amorphous InGaZnO (a-IGZO) thin film transistors. A trimethylaluminum precursor was used as an Al source, and H2O gas (H2O device) and O-2 plasma with a long plasma time (O-2 LP device) and a short plasma time (O-2 SP device) were used as oxidants. The initial electrical characteristics, including the hysteresis, on-off current ratio, and subthreshold swing, were superior in the H2O device compared to the O-2 LP and O-2 SP devices. In the positive bias stress (PBS) results, the degradation characteristics showed a tendency similar to the transfer properties. However, under the negative bias illumination stress (NBIS), the stability of the H2O device was significantly reduced compared to the O-2 LP and O-2 SP devices. In this paper, the mechanism of instability, which has opposite results in terms of the PBS and NBIS for the three devices, was identified using capacitance-voltage, three-terminal charge pumping as electrical analysis techniques and secondary ion mass spectroscopy (SIMS) as a physical analysis technique. It was confirmed that the surface oxidation of a-IGZO deteriorates the interfacial properties, causing the transfer characteristics to degrade. The carbon of the Al2O3 film identified via SIMS analysis acts as a trap layer, causing deterioration in the PBS. Alternatively, in the NBIS, it was observed that the carbon acts as a capture site for photo-excited holes, thereby promoting device stability. [GRAPHICS] .Z | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.title | Effect of ALD- and PEALD- Grown Al2O3 Gate Insulators on Electrical and Stability Properties for a-IGZO Thin-Film Transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Bosung | - |
dc.identifier.doi | 10.1007/s13391-021-00282-z | - |
dc.identifier.scopusid | 2-s2.0-85103431070 | - |
dc.identifier.wosid | 000635501900001 | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.17, no.4, pp.299 - 306 | - |
dc.relation.isPartOf | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 17 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 299 | - |
dc.citation.endPage | 306 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002722635 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CAPACITORS | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordPlus | LIGHT | - |
dc.subject.keywordAuthor | Al2O3 | - |
dc.subject.keywordAuthor | ALD | - |
dc.subject.keywordAuthor | PEALD | - |
dc.subject.keywordAuthor | Carbon | - |
dc.subject.keywordAuthor | Hydrogen | - |
dc.subject.keywordAuthor | a-IGZO | - |
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