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Intramolecular Noncovalent Interaction-Enabled Dopant-Free Hole-Transporting Materials for High-Performance Inverted Perovskite Solar Cells

Authors
Yang, KunLiao, QiaoganHuang, JunZhang, ZilongSu, MengyaoChen, ZhicaiWu, ZiangWang, DongLai, ZiweiWoo, Han YoungCao, YanGao, PengGuo, Xugang
Issue Date
1월-2022
Publisher
WILEY-V C H VERLAG GMBH
Keywords
dopant-free hole-transporting materials; hole mobility; noncovalent interactions; perovskites; solar cells
Citation
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.61, no.2
Indexed
SCIE
SCOPUS
Journal Title
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
Volume
61
Number
2
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/137568
DOI
10.1002/anie.202113749
ISSN
1433-7851
Abstract
Intramolecular noncovalent interactions (INIs) have served as a powerful strategy for accessing organic semiconductors with enhanced charge transport properties. Herein, we apply the INI strategy for developing dopant-free hole-transporting materials (HTMs) by constructing two small-molecular HTMs featuring an INI-integrated backbone for high-performance perovskite solar cells (PVSCs). Upon incorporating noncovalent S...O interaction into their simple-structured backbones, the resulting HTMs, BTORA and BTORCNA, showed self-planarized backbones, tuned energy levels, enhanced thermal properties, appropriate film morphology, and effective defect passivation. More importantly, the high film crystallinity enables the materials with substantial hole mobilities, thus rendering them as promising dopant-free HTMs. Consequently, the BTORCNA-based inverted PVSCs delivered a power conversion efficiency of 21.10 % with encouraging long-term device stability, outperforming the devices based on BTRA without S...O interaction (18.40 %). This work offers a practical approach to designing charge transporting layers with high intrinsic mobilities for high-performance PVSCs.
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