<p>Lowering firing temperature of a p-type passivated emitter rear contact Si solar cell via current injection</p>
DC Field | Value | Language |
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dc.contributor.author | Choi, Dongjin | - |
dc.contributor.author | Park, HyunJung | - |
dc.contributor.author | Bae, Soohyun | - |
dc.contributor.author | Shin, Seung Hyun | - |
dc.contributor.author | Han, Hyebin | - |
dc.contributor.author | Kloeter, Bernhard | - |
dc.contributor.author | Kim, Donghwan | - |
dc.contributor.author | Lee, Hae-Seok | - |
dc.contributor.author | Kang, Yoonmook | - |
dc.date.accessioned | 2022-05-09T06:41:49Z | - |
dc.date.available | 2022-05-09T06:41:49Z | - |
dc.date.created | 2022-05-09 | - |
dc.date.issued | 2022-06-01 | - |
dc.identifier.issn | 0927-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/140800 | - |
dc.description.abstract | Effective contact formation during low-temperature firing with applied current was investigated in this study. The screen-printed electrode was fired using rapid thermal annealing and contacted by etching the passivation layer and forming Ag crystallites. In our previous study, we proposed a method for reducing this contact resistance from 5 to 1 m omega cm(2) by applying a current during the firing of a phosphorous-doped (P-doped) n(+) emitter in a p-type Si wafer without a silicon nitride (SiNx) passivation layer. According to the results, current application during the firing of Si solar cells should reduce the required firing temperature. Herein, a current (3 A) was applied between the screen-printed electrode and P-doped n(+) emitter in a p-type Si wafer with an SiNx passivation layer during low-temperature firing from 350 to 600 ?. The major effects of the proposed methods were a reduced contact resistance and enhanced of SiNx etching. Cross-sectional scanning electron microscopy images at different firing temperatures demonstrated that current injection during firing promoted the etching of the SiNx layer. Additionally, the method of current injection with low-temperature firing proposed in this work resulted in a device with a solar cell efficiency of 19.0%, which is similar to the efficiency of a reference cell fired at a higher temperature. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | THICK-FILM CONTACTS | - |
dc.subject | N-TYPE SILICON | - |
dc.subject | THERMAL-PROPERTIES | - |
dc.subject | GLASS FRIT | - |
dc.subject | LEAD | - |
dc.subject | OXYGEN | - |
dc.title | <p>Lowering firing temperature of a p-type passivated emitter rear contact Si solar cell via current injection</p> | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Hae-Seok | - |
dc.contributor.affiliatedAuthor | Kang, Yoonmook | - |
dc.identifier.doi | 10.1016/j.solmat.2022.111587 | - |
dc.identifier.scopusid | 2-s2.0-85125437949 | - |
dc.identifier.wosid | 000781853600004 | - |
dc.identifier.bibliographicCitation | SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.239 | - |
dc.relation.isPartOf | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - |
dc.citation.title | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - |
dc.citation.volume | 239 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Energy & Fuels | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THICK-FILM CONTACTS | - |
dc.subject.keywordPlus | N-TYPE SILICON | - |
dc.subject.keywordPlus | THERMAL-PROPERTIES | - |
dc.subject.keywordPlus | GLASS FRIT | - |
dc.subject.keywordPlus | LEAD | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.subject.keywordAuthor | Silicon solar cells | - |
dc.subject.keywordAuthor | Metallization | - |
dc.subject.keywordAuthor | Current injection | - |
dc.subject.keywordAuthor | Low-temperature | - |
dc.subject.keywordAuthor | Screen-printed Ag contact | - |
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