Air Annealing Process for Threshold Voltage Tuning of MoTe2 FET
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Soojin | - |
dc.contributor.author | Roh, Yeeun | - |
dc.contributor.author | Choi, Younguk | - |
dc.contributor.author | Jun, Ah Hyun | - |
dc.contributor.author | Seo, Hojun | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.date.accessioned | 2022-05-09T09:42:40Z | - |
dc.date.available | 2022-05-09T09:42:40Z | - |
dc.date.created | 2022-05-09 | - |
dc.date.issued | 2022-04 | - |
dc.identifier.issn | 2076-3417 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/140819 | - |
dc.description.abstract | A stable doping technique for modifying the conduction behaviour of two-dimensional (2D) nanomaterial-based transistors is imperative for applications based on low-power complementary oxide thin-film transistors. Achieving an ambipolar feature with a controlled threshold voltage in both the p- and n-regimes is crucial for applying MoTe2-based devices as electronic devices because their native doping states are unipolar. In this study, a simple method to tune the threshold voltage of MoTe2 field-effect transistors (FETs) was investigated in order to realise an enhancement-mode MoTe2 thin-film transistor by implementing a facile method to modulate the carrier polarity based on the oxidative properties of MoTe2 FETs. Annealing in air induced a continuous p-doping effect in the devices without significant electrical degradation. Through a precise control of the duration and temperature of the post-annealing process, the tailoring technique induces hole doping, which results in a remarkable shift in transfer characteristics, thus leading to a charge neutrality point of the devices at zero gate bias. This study demonstrates the considerable potential of air heating as a reliable and economical post-processing method for precisely modifying the threshold voltage and further controlling the doping states of MoTe2-based FETs for use in logic inverters with 2D semiconductors. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | TRANSITION | - |
dc.title | Air Annealing Process for Threshold Voltage Tuning of MoTe2 FET | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.identifier.doi | 10.3390/app12083840 | - |
dc.identifier.scopusid | 2-s2.0-85128844416 | - |
dc.identifier.wosid | 000786301000001 | - |
dc.identifier.bibliographicCitation | APPLIED SCIENCES-BASEL, v.12, no.8 | - |
dc.relation.isPartOf | APPLIED SCIENCES-BASEL | - |
dc.citation.title | APPLIED SCIENCES-BASEL | - |
dc.citation.volume | 12 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Engineering, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordAuthor | MoTe2 | - |
dc.subject.keywordAuthor | transition metal dichalcogenides | - |
dc.subject.keywordAuthor | field-effect transistors | - |
dc.subject.keywordAuthor | doping | - |
dc.subject.keywordAuthor | threshold voltage | - |
dc.subject.keywordAuthor | charge neutrality | - |
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