Oxidation-resistant Cu-based metallisation for Si solar cellsopen access
- Authors
- Son, Hyung Jin; Hong, Kuen Kee; Ju, Byeong-Kwon; Kim, Sung Hyun
- Issue Date
- 4월-2022
- Publisher
- WILEY
- Keywords
- boron; copper oxidation; copper paste; metallisation; silicon solar cell
- Citation
- ENERGY SCIENCE & ENGINEERING, v.10, no.4, pp.1264 - 1271
- Indexed
- SCIE
SCOPUS
- Journal Title
- ENERGY SCIENCE & ENGINEERING
- Volume
- 10
- Number
- 4
- Start Page
- 1264
- End Page
- 1271
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/140825
- DOI
- 10.1002/ese3.1082
- ISSN
- 2050-0505
- Abstract
- Herein, the oxidation resistance effect of B on the high-temperature sintering of Cu-based metallisation for crystalline Si solar cells is described. Atmospheric sintering of B-containing Cu-Ag core-shell paste printed on a Si wafer is performed at high temperatures (up to 800 degrees C). The oxidation of Cu is effectively prevented by B, affording a brown bulky Cu-Ag film with low electrical resistivity (order of 10(-6) omega cm). The Cu-Ag film formation is monitored via microscopic and crystallographic analyses. The Cu-Ag film exhibits increased electrical conductivity with increasing B content from 0 to 5 wt.%. X-ray photoelectron spectroscopy data reveal that the B2O3 formed on the Cu-Ag film surface prevents external oxygen diffusion into the bulk. The developed paste is applied to a crystalline Si solar cell, affording a maximum efficiency of 17.55%. These results show the practical applicability of Cu-based electrodes in the solar cell industry.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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