Hysteretic temperature dependence of resistance controlled by gate voltage in LaAlO3/SrTiO3 heterointerface electron system
DC Field | Value | Language |
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dc.contributor.author | Kwak, Yongsu | - |
dc.contributor.author | Han, Woojoo | - |
dc.contributor.author | Lee, Joon Sung | - |
dc.contributor.author | Song, Jonghyun | - |
dc.contributor.author | Kim, Jinhee | - |
dc.date.accessioned | 2022-05-17T05:41:41Z | - |
dc.date.available | 2022-05-17T05:41:41Z | - |
dc.date.created | 2022-05-17 | - |
dc.date.issued | 2022-04-19 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/141090 | - |
dc.description.abstract | For two-dimensional electron gas device applications, it is important to understand how electrical-transport properties are controlled by gate voltage. Here, we report gate voltage-controllable hysteresis in the resistance-temperature characteristics of two-dimensional electron gas at LaAlO3/SrTiO3 heterointerface. Electron channels made of the LaAlO3/SrTiO3 heterointerface showed hysteretic resistance-temperature behavior: the measured resistance was significantly higher during upward temperature sweeps in thermal cycling tests. Such hysteretic behavior was observed only after application of positive back-gate voltages below 50 K in the thermal cycle, and the magnitude of hysteresis increased with the applied back-gate voltage. To explain this gate-controlled resistance hysteresis, we propose a mechanism based on electron trapping at impurity sites, in conjunction with the strong temperature-dependent dielectric constant of the SrTiO3 substrate. Our model explains well the observed gate-controlled hysteresis of the resistance-temperature characteristics, and the mechanism should be also applicable to other SrTiO3-based oxide systems, paving the way to applications of oxide heterostructures to electronic devices. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | NATURE PORTFOLIO | - |
dc.subject | INTERFACES | - |
dc.subject | GAS | - |
dc.title | Hysteretic temperature dependence of resistance controlled by gate voltage in LaAlO3/SrTiO3 heterointerface electron system | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Joon Sung | - |
dc.identifier.doi | 10.1038/s41598-022-10425-3 | - |
dc.identifier.scopusid | 2-s2.0-85128449536 | - |
dc.identifier.wosid | 000783915800045 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.12, no.1 | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | INTERFACES | - |
dc.subject.keywordPlus | GAS | - |
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