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CuInS2 Photocathodes with Atomic Gradation-Controlled (Ta,Mo)(x)(O,S)(y) Passivation Layers for Efficient Photoelectrochemical H-2 Production

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dc.contributor.authorChae, Sang Youn-
dc.contributor.authorKim, Yoolim-
dc.contributor.authorPark, Eun Duck-
dc.contributor.authorIm, Sang Hyuk-
dc.contributor.authorJoo, Oh-Shim-
dc.date.accessioned2022-05-17T20:41:19Z-
dc.date.available2022-05-17T20:41:19Z-
dc.date.created2022-05-17-
dc.date.issued2021-12-15-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/141165-
dc.description.abstractAn atomic gradient passivation layer, (Ta,Mo)(x)(O,S)(y,) is designed to improve the charge transportation and photoelectrochemical activity of CuInS2 -based photoelectrodes. We found that Mo spontaneously diffused to the a-TaOx layer during ebeam evaporation. This result indicates that the gradient profile of MoOx/TaOx is formed in the sublayer of (Ta,Mo)(x)(O,S)(y). To understand the atomic-gradation effects of the (Ta,Mo)(x)(O,S)(y )passive layer, the composition and (photo)electrochemical properties have been characterized in detail. When this atomic gradientpassive layer is applied to CuInS2-based photocathodes, promising photocurrent and onset potential are seen without using Pt cocatalysts. This is one of the highest activities among reported CuInS2 photocathodes, which are not combined with noble metal cocatalysts. Excellent photoelectrochemical activity of the photoelectrode can be mainly achieved by (1) the electron transient time improved due to the conductive Mo-incorporated TaOx layer and (2) the boosted electrocatalytic activity by Mo-x(O,S)(y) formation.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER CHEMICAL SOC-
dc.subjectHYDROGEN EVOLUTION-
dc.subjectACTIVE-SITES-
dc.subjectTIO2-
dc.subjectMOS2-
dc.subjectSPECTROSCOPY-
dc.titleCuInS2 Photocathodes with Atomic Gradation-Controlled (Ta,Mo)(x)(O,S)(y) Passivation Layers for Efficient Photoelectrochemical H-2 Production-
dc.typeArticle-
dc.contributor.affiliatedAuthorIm, Sang Hyuk-
dc.identifier.doi10.1021/acsami.1c09560-
dc.identifier.scopusid2-s2.0-85114640128-
dc.identifier.wosid000752977200019-
dc.identifier.bibliographicCitationACS APPLIED MATERIALS & INTERFACES, v.13, no.49, pp.58447 - 58457-
dc.relation.isPartOfACS APPLIED MATERIALS & INTERFACES-
dc.citation.titleACS APPLIED MATERIALS & INTERFACES-
dc.citation.volume13-
dc.citation.number49-
dc.citation.startPage58447-
dc.citation.endPage58457-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusHYDROGEN EVOLUTION-
dc.subject.keywordPlusACTIVE-SITES-
dc.subject.keywordPlusTIO2-
dc.subject.keywordPlusMOS2-
dc.subject.keywordPlusSPECTROSCOPY-
dc.subject.keywordAuthortantalum oxide-
dc.subject.keywordAuthorpassivation layer-
dc.subject.keywordAuthorphotoelectrochemical cell-
dc.subject.keywordAuthorCuInS2-
dc.subject.keywordAuthoratomic gradation-
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