Influence of oxygen-related defects on In-Ga-Sn-O semiconductor due to plasma-enhanced atomic layer deposition of Al2O3 for low-temperature thin-film transistor in terms of electrical properties
DC Field | Value | Language |
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dc.contributor.author | Kim, Hyeong Wook | - |
dc.contributor.author | Oh, Changyong | - |
dc.contributor.author | Jang, Hyunjae | - |
dc.contributor.author | Kim, Min Young | - |
dc.contributor.author | Kim, Bo Sung | - |
dc.date.accessioned | 2022-08-10T07:40:48Z | - |
dc.date.available | 2022-08-10T07:40:48Z | - |
dc.date.created | 2022-08-10 | - |
dc.date.issued | 2022-10-15 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/142712 | - |
dc.description.abstract | In-Ga-Sn-O (IGTO) thin-film transistors (TFTs) were fabricated with Al2O3 gate insulators by plasma -enhanced atomic layer deposition (PEALD) at a temperature of 150 degrees C. Electrical performances of IGTO TFTs were significantly affected by plasma conditions when Al2O3 was deposited on IGTO thin films by PEALD. Analyses of X-ray photoemission spectroscopy revealed that excessive oxygen species activated at high plasma power above 150 W were chemisorbed to IGTO films to create excess oxygen bonds such as oxygen interstitials (O-i). Distributions of density of states in IGTO bandgap extracted by photonic capacitance voltage measurement matched well with positive bias stress (PBS) instability of TFTs. Split-oxygen interstitials [O-i (split)] first created on IGTO by oxygen plasma might migrate to the octahedral site by a constant high gate bias to form octahedral-oxygen interstitials [O-i(2)-(oct)] by capturing electrons under PBS and reside deep states. Significant changes of subthreshold slope in I-V characteristics during the recovery time after removing PBS indicated that these octahedral-oxygen interstitials such as O-i (oct) and O-i(2)-(oct) obviously originated from O-i (split) initially formed by plasma and that O-i (oct) defects created by a relaxation process acted as a neutral acceptor-like state above Fermi level and deteriorated electrical properties of IGTO TFT. (C) 2022 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | AMORPHOUS OXIDE SEMICONDUCTOR | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | CHANNEL | - |
dc.title | Influence of oxygen-related defects on In-Ga-Sn-O semiconductor due to plasma-enhanced atomic layer deposition of Al2O3 for low-temperature thin-film transistor in terms of electrical properties | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Bo Sung | - |
dc.identifier.doi | 10.1016/j.jallcom.2022.165649 | - |
dc.identifier.scopusid | 2-s2.0-85132220770 | - |
dc.identifier.wosid | 000812994000004 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.918 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 918 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | AMORPHOUS OXIDE SEMICONDUCTOR | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordAuthor | In-Ga-Sn-O (IGTO) | - |
dc.subject.keywordAuthor | Thin-film transistor (TFT) | - |
dc.subject.keywordAuthor | Al2O3 | - |
dc.subject.keywordAuthor | Plasma-enhanced atomic layer deposition (PEALD) | - |
dc.subject.keywordAuthor | Oxygen interstitial | - |
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