Fabrication of Wearable Transistor with All-Graphene Electrodes via Hot Pressingopen access
- Authors
- Kim, Youn; Hong, Jin-Yong; Jeon, Young-Pyo; Park, Jung Bin; Lee, Cheol Jin; Lee, Jea Uk
- Issue Date
- 7월-2022
- Publisher
- MDPI
- Keywords
- textile; graphene; electrode; hot pressing; transistor
- Citation
- POLYMERS, v.14, no.13
- Indexed
- SCIE
SCOPUS
- Journal Title
- POLYMERS
- Volume
- 14
- Number
- 13
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/142772
- DOI
- 10.3390/polym14132602
- ISSN
- 2073-4360
- Abstract
- Textile electronics are ideal for novel electronic devices owing to their flexibility, light weight, and wearability. In this work, wearable organic field-effect transistors (OFETs) with all-graphene electrodes, fabricated using hot pressing, are described. First, highly conductive and flexible electrodes consisting of a cotton textile substrate and electrochemically exfoliated graphene (EEG) were prepared via hot pressing. The EEG/textile electrodes exhibited a low sheet resistance of 1.3 Omega sq(-1) and high flexibility; these were used as gate electrodes in the wearable OFETs. In addition, spray-coated EEG was also used as the source/drain (S/D) electrodes of the wearable OFETs, which recorded a sheet resistance of 14.8 Omega sq(-1) after hot pressing. The wearable OFETs exhibited stable electrical performance, a field-effect mobility of 13.8 cm(2) V-1 s(-1), and an on-off current ratio of similar to 10(3) during 1000 cycles of bending. Consequently, the fabrication method for wearable transistors developed using textiles and hot-pressed graphene electrodes has potential applications in next-generation wearable devices.
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