Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Electrochemical modulation of trap states in PbS QDs and their electrical characterization

Full metadata record
DC Field Value Language
dc.contributor.authorJin, Junyoung-
dc.contributor.authorPark, Tae Hwan-
dc.contributor.authorSeong, Tae-Yeon-
dc.contributor.authorHwang, Gyu Weon-
dc.date.accessioned2022-08-12T16:40:57Z-
dc.date.available2022-08-12T16:40:57Z-
dc.date.created2022-08-12-
dc.date.issued2022-07-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/142928-
dc.description.abstractThe optoelectronic devices based on colloidal lead sulfide quantum dots (PbS QDs) have suffered from electronic trap states in bandgap. The trap state is a source for accelerating carrier recombination and degrading the performance of optoelectronic devices. Here, we treated PbS QD electrochemically using cyclic voltammetry to modulate the density of trap states. The reduction of the trap density in the QD layer after electrochemical treatment was confirmed by the impedance analyzing technique, the thermal admittance spectroscopy. The XPS spectra showed that the QD films are oxidized after the electrochemical treatment, implying that the oxidation of the QD surface regulated the trap density through the electrochemical treatment.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectOPEN-CIRCUIT VOLTAGE-
dc.subjectSUB-BANDGAP STATES-
dc.subjectQUANTUM DOTS-
dc.titleElectrochemical modulation of trap states in PbS QDs and their electrical characterization-
dc.title.alternativeElectrochemical modulation of trap states in PbS QDs and their electrical characterization-
dc.typeArticle-
dc.contributor.affiliatedAuthorSeong, Tae-Yeon-
dc.identifier.doi10.1007/s40042-022-00511-0-
dc.identifier.scopusid2-s2.0-85131519535-
dc.identifier.wosid000808403900001-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.81, no.1, pp.54 - 58-
dc.relation.isPartOfJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume81-
dc.citation.number1-
dc.citation.startPage54-
dc.citation.endPage58-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.identifier.kciidART002860894-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusOPEN-CIRCUIT VOLTAGE-
dc.subject.keywordPlusSUB-BANDGAP STATES-
dc.subject.keywordPlusQUANTUM DOTS-
dc.subject.keywordAuthorLead sulfide-
dc.subject.keywordAuthorQuantum dot-
dc.subject.keywordAuthorCyclic voltammetry-
dc.subject.keywordAuthorTrap passivation-
dc.subject.keywordAuthorThermal admittance spectroscopy-
dc.subject.keywordAuthorXPS-
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher SEONG, TAE YEON photo

SEONG, TAE YEON
College of Engineering (Department of Materials Science and Engineering)
Read more

Altmetrics

Total Views & Downloads

BROWSE