Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Thermal stress-assisted annealing to improve the crystalline quality of an epitaxial YSZ buffer layer on Si

Authors
Choi, Hyung-JinJang, JinhyukJung, Soo YoungNing, RuiguangKim, Min-SeokJung, Sung-JinLee, Jun YoungPark, Jin SooLee, Byung ChulJang, Ji-SooKim, Seong KeunLee, Kyu HyoungLee, June HyukWon, Sung OkLi, YulanHu, ShenyangChoi, Si-YoungBaek, Seung-Hyub
Issue Date
14-7월-2022
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY C, v.10, no.27, pp.10027 - 10036
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF MATERIALS CHEMISTRY C
Volume
10
Number
27
Start Page
10027
End Page
10036
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/143358
DOI
10.1039/d2tc01665f
ISSN
2050-7526
Abstract
Yttria-stabilised zirconia (YSZ) is an excellent buffer layer that can be epitaxially grown on Si through low-cost deposition techniques, such as pulsed laser deposition (PLD) and sputtering, for the realisation of novel electronics, where a variety of epitaxial functional oxides are integrated on Si. However, the crystalline quality of the as-grown YSZ on Si is poorer than that of the SrTiO3 buffer layer grown by molecular beam epitaxy (MBE). Here, we report a simple annealing technique for achieving high-quality single-crystal oxides on a Si substrate. We significantly improved the crystalline quality of YSZ/Si through the mechanical strain energy arising naturally from the large difference between the thermal expansion coefficients of YSZ (similar to 9 x 10(-6) K-1) and Si (similar to 3 x 10(-6) K-1), which acts as an extra energy source for defect annihilation. A rapid heating rate (similar to 110 degrees C s(-1)) allows this strain energy to maximally build up in the YSZ layer at the annealing temperature, and the defects are effectively annihilated during annealing. We further demonstrate the integration of high-quality epitaxial CeO2 and orthorhombic or tetragonal Y:HfO2 thin films on YSZ/Si substrates through the thermal stress-assisted annealing method. Our results not only provide insights into the manipulation of thermal stresses to engineer epitaxial heterostructures but also provide opportunities to integrate high-quality complex oxides on Si for the commercialisation of novel electronics.
Files in This Item
There are no files associated with this item.
Appears in
Collections
ETC > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetrics

Total Views & Downloads

BROWSE