Defect Engineering for High Performance and Extremely Reliable a-IGZO Thin-Film Transistor in QD-OLED
DC Field | Value | Language |
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dc.contributor.author | Park, Young-Gil | - |
dc.contributor.author | Cho, Dong Yeon | - |
dc.contributor.author | Kim, Ran | - |
dc.contributor.author | Kim, Kang Hyun | - |
dc.contributor.author | Lee, Ju Won | - |
dc.contributor.author | Lee, Doo Hyoung | - |
dc.contributor.author | Jeong, Soo Im | - |
dc.contributor.author | Ahn, Na Ri | - |
dc.contributor.author | Lee, Woo-Geun | - |
dc.contributor.author | Choi, Jae Beom | - |
dc.contributor.author | Kim, Min Jung | - |
dc.contributor.author | Kim, Donghyun | - |
dc.contributor.author | Jin, Seunghee | - |
dc.contributor.author | Park, Dong Geun | - |
dc.contributor.author | Kim, Jungchun | - |
dc.contributor.author | Choi, Saeyan | - |
dc.contributor.author | Bang, Seain | - |
dc.contributor.author | Lee, Jae Woo | - |
dc.date.accessioned | 2022-12-09T18:41:44Z | - |
dc.date.available | 2022-12-09T18:41:44Z | - |
dc.date.created | 2022-12-08 | - |
dc.date.issued | 2022-07 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/146626 | - |
dc.description.abstract | An amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT), which exhibits the best electrical stability (PBTS <= 0.009 V), is implemented to create quantum-dot organic light-emitting diode product. Electrical stability has been explained through various mechanisms involving defects related to oxygen and hydrogen. The defects of a-IGZO are identified and the parameters of the deposition process are utilized to obtain V-o(+) and V-Zn(-) values of 1.7 x 10(17) and 2.4 x 10(18) spins cm(-3), respectively, which are quantified using electron spin resonance for the first time. The defects of the gate insulator (GI) in the upper and lower parts of the a-IGZO TFT and the oxygen and hydrogen inflow/diffusion generated during the process are also controlled. From well-controlled a-IGZO and GI, the defect density at the top-channel interface and near-interface of the a-IGZO TFT is reduced by 85% and 70%, respectively. The defects in the bottom-channel are also reduced by 83% and 75% for the interface and near-interface, respectively. Electrical stability is secured by controlling V-o(+) and V-Zn(-) and reducing sub-gap trap density among interface defects that are not directly observed until now. In this paper, it is reported that the best a-IGZO TFT performance is achieved through defect engineering. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.subject | ZNO | - |
dc.subject | HYDROGEN | - |
dc.subject | CRYSTALLINE | - |
dc.subject | DENSITY | - |
dc.subject | ESR | - |
dc.title | Defect Engineering for High Performance and Extremely Reliable a-IGZO Thin-Film Transistor in QD-OLED | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jae Woo | - |
dc.identifier.doi | 10.1002/aelm.202101273 | - |
dc.identifier.scopusid | 2-s2.0-85124759057 | - |
dc.identifier.wosid | 000757687000001 | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.8, no.7 | - |
dc.relation.isPartOf | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | CRYSTALLINE | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | ESR | - |
dc.subject.keywordAuthor | a-IGZO TFT | - |
dc.subject.keywordAuthor | ESR | - |
dc.subject.keywordAuthor | LFN | - |
dc.subject.keywordAuthor | oxygen vacancy | - |
dc.subject.keywordAuthor | TDS | - |
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