Physics Based Compact Model of Low-Frequency Noise for Gate-All-Around MOSFETs

LEE Jae Woo

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Physics Based Compact Model of Low-Frequency Noise for Gate-All-Around MOSFETsPhysics Based Compact Model of Low-Frequency Noise for Gate-All-Around MOSFETs

Alternative Title: Physics Based Compact Model of Low-Frequency Noise for Gate-All-Around MOSFETs

Authors: LEE Jae Woo

Issue Date: 14-2월-2019

Publisher: 한국반도체산업협회

Citation: 제 26회 한국반도체학술대회

URI: https://scholar.korea.ac.kr/handle/2021.sw.korea/14672

Conference Name: 제 26회 한국반도체학술대회

Place: KO

Conference Date: 2019-02-13

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Appears in Collections: Graduate School > Department of Electronics and Information Engineering > 2. Conference Papers

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