Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
High Temperature Characterization of High-K/Metal-Gate 2-Stacked Gate-AllAround Nanowire FET Versus FinFET
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | LEE Jae Woo | - |
| dc.date.accessioned | 2021-08-27T18:45:06Z | - |
| dc.date.available | 2021-08-27T18:45:06Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2019-02-14 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/14673 | - |
| dc.publisher | 한국반도체산업협회 | - |
| dc.title | High Temperature Characterization of High-K/Metal-Gate 2-Stacked Gate-AllAround Nanowire FET Versus FinFET | - |
| dc.title.alternative | High Temperature Characterization of High-K/Metal-Gate 2-Stacked Gate-AllAround Nanowire FET Versus FinFET | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | LEE Jae Woo | - |
| dc.identifier.bibliographicCitation | 제 26회 한국 반도체 학술대회 | - |
| dc.relation.isPartOf | 제 26회 한국 반도체 학술대회 | - |
| dc.relation.isPartOf | 제 26회 한국 반도체 학술대회 초록 | - |
| dc.citation.title | 제 26회 한국 반도체 학술대회 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2019-02-13 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.