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AlN 완충층 증착조건에 따른 GaN 에피성장과 그에 따른 XRD, Raman, PL 분석

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dc.contributor.authorBYUN, Dong Jin-
dc.date.accessioned2021-08-27T20:05:36Z-
dc.date.available2021-08-27T20:05:36Z-
dc.date.created2021-04-22-
dc.date.issued2018-11-09-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/16316-
dc.publisher한국재료학회-
dc.titleAlN 완충층 증착조건에 따른 GaN 에피성장과 그에 따른 XRD, Raman, PL 분석-
dc.title.alternativeThe research of the GaN epi-growth by AlN buffer layer deposition condition and the analysis of XRD, Raman, PL.-
dc.typeConference-
dc.contributor.affiliatedAuthorBYUN, Dong Jin-
dc.identifier.bibliographicCitation2018년도 학국재료학회 추계학술대회-
dc.relation.isPartOf2018년도 학국재료학회 추계학술대회-
dc.relation.isPartOf2018년도 학국재료학회 추계학술대회-
dc.citation.title2018년도 학국재료학회 추계학술대회-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2018-11-07-
dc.type.rimsCONF-
dc.description.journalClass2-
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공과대학 (신소재공학부)
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