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Effects of Y to Mn ratio on memory window in the YMnO3 ferroelectric gate
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim Yong Tae | - |
| dc.date.accessioned | 2024-11-14T04:59:50Z | - |
| dc.date.available | 2024-11-14T04:59:50Z | - |
| dc.date.issued | 2000-07-24 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/166466 | - |
| dc.title | Effects of Y to Mn ratio on memory window in the YMnO3 ferroelectric gate | - |
| dc.type | Conference | - |
| dc.citation.title | ICEE2K | - |
| dc.citation.startPage | 66 | - |
| dc.citation.endPage | 69 | - |
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