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Selective area growth of GaN with air void tunnel on patterned sapphire substrate by using sacrificial layer
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BYUN, Dong Jin | - |
| dc.date.accessioned | 2021-08-27T21:52:01Z | - |
| dc.date.available | 2021-08-27T21:52:01Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2018-08-21 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/18123 | - |
| dc.publisher | International Union of Materials Research Societies | - |
| dc.title | Selective area growth of GaN with air void tunnel on patterned sapphire substrate by using sacrificial layer | - |
| dc.title.alternative | Selective area growth of GaN with air void tunnel on patterned sapphire substrate by using sacrificial layer | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | BYUN, Dong Jin | - |
| dc.identifier.bibliographicCitation | IUMRS-ICEM 2018 | - |
| dc.relation.isPartOf | IUMRS-ICEM 2018 | - |
| dc.relation.isPartOf | IUMRS-ICEM 2018 | - |
| dc.citation.title | IUMRS-ICEM 2018 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2018-08-19 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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