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Tunable, High-Performance Switching in Silicon-Oxide(SiOx) Memristor Enabled by a Vertically Integrated Graphene Barristor
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Gunuk Wang | - |
| dc.date.accessioned | 2021-08-27T22:29:44Z | - |
| dc.date.available | 2021-08-27T22:29:44Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2018-07-11 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/18392 | - |
| dc.publisher | 나노기술협의회 | - |
| dc.title | Tunable, High-Performance Switching in Silicon-Oxide(SiOx) Memristor Enabled by a Vertically Integrated Graphene Barristor | - |
| dc.title.alternative | Tunable, High-Performance Switching in Silicon-Oxide(SiOx) Memristor Enabled by a Vertically Integrated Graphene Barristor | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Gunuk Wang | - |
| dc.identifier.bibliographicCitation | NANO KOREA (2018) | - |
| dc.relation.isPartOf | NANO KOREA (2018) | - |
| dc.relation.isPartOf | 2018 NANO KOREA 초록집 | - |
| dc.citation.title | NANO KOREA (2018) | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2018-07-11 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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