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GaN epitaxial growth using Ion implantation process on Patterned Sapphire Substrate

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dc.contributor.authorBYUN, Dong Jin-
dc.date.accessioned2021-08-27T23:46:43Z-
dc.date.available2021-08-27T23:46:43Z-
dc.date.created2021-04-22-
dc.date.issued2018-05-18-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/19183-
dc.publisher한국재료학회-
dc.titleGaN epitaxial growth using Ion implantation process on Patterned Sapphire Substrate-
dc.title.alternativeGaN epitaxial growth using Ion implantation process on Patterned Sapphire Substrate-
dc.typeConference-
dc.contributor.affiliatedAuthorBYUN, Dong Jin-
dc.identifier.bibliographicCitation2018년도 한국재료학회 춘계학술대회-
dc.relation.isPartOf2018년도 한국재료학회 춘계학술대회-
dc.relation.isPartOf2018년도 한국재료학회 춘계학술대회-
dc.citation.title2018년도 한국재료학회 춘계학술대회-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2018-05-16-
dc.type.rimsCONF-
dc.description.journalClass2-
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공과대학 (신소재공학부)
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