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The impact of hBN layers on guided exciton-polariton modes in WS<sub>2</sub> multilayersopen access

Authors
Lee, Ho SeungSung, JunghyunShin, Dong-JinGong, Su-Hyun
Issue Date
23-Jan-2024
Publisher
WALTER DE GRUYTER GMBH
Keywords
exciton-polariton; guided exciton-polariton; self-hybridization; hexagonal boron nitride; transition metal dichalcogenide; tungsten disulfide
Citation
NANOPHOTONICS, v.13, no.8, pp 1475 - 1482
Pages
8
Indexed
SCIE
SCOPUS
Journal Title
NANOPHOTONICS
Volume
13
Number
8
Start Page
1475
End Page
1482
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/199501
DOI
10.1515/nanoph-2023-0822
ISSN
2192-8606
2192-8614
Abstract
Guided exciton-polariton modes naturally exist in bare transition metal dichalcogenide (TMDC) layers due to self-hybridization between excitons and photons. However, these guided polariton modes exhibit a limited propagation distance owing to the substantial exciton absorption within the material. Here, we investigated the impact of hexagonal boron nitride (hBN) layers on guided exciton-polariton modes in WS2 multilayers. By integrating hBN layers, we demonstrate a notable enhancement in the quality of guided exciton-polariton modes. The hBN layers can reduce substrate surface roughness and provide surface protection for the WS2 layer, mitigating inhomogeneous broadening of the exciton resonance. Consequently, we experimentally observed that the propagation distance of polariton modes substantially increased with hBN layers. Additionally, the polariton spectrum broadened due to efficient exciton relaxation to the polariton states at lower energies. Comparison with simulation data emphasizes that the observed improvements are primarily attributed to enhanced exciton quality. The promising outcomes with hBN encapsulation suggest its potential to overcome strong excitonic losses of the guided exciton polariton in implementing nanophotonic devices. Furthermore, this approach provides a new avenue for exploring the novel physics of guided exciton-polariton modes and their potential applications in polariton-based all-optical integrated circuits.
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