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Gate-tunable silicon oxide memory based on vertically integrated graphene barristorGate-tunable silicon oxide memory based on vertically integrated graphene barristor
- Alternative Title
- Gate-tunable silicon oxide memory based on vertically integrated graphene barristor
- Authors
- Gunuk Wang
- Issue Date
- 5-2월-2018
- Publisher
- 한국반도체산업협회
- Citation
- The 25th Korean Conference on Semiconductor
- Conference Name
- The 25th Korean Conference on Semiconductor
- Place
- KO
- Conference Date
- 2018-02-05
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