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gate-tunable 2D memristor devices based on monolithically-integrated heterojunctions
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Chul-Ho | - |
| dc.date.accessioned | 2021-08-28T02:27:55Z | - |
| dc.date.available | 2021-08-28T02:27:55Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2017-12-08 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/20714 | - |
| dc.publisher | The Korean Physical Society | - |
| dc.title | gate-tunable 2D memristor devices based on monolithically-integrated heterojunctions | - |
| dc.title.alternative | gate-tunable 2D memristor devices based on monolithically-integrated heterojunctions | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Lee, Chul-Ho | - |
| dc.identifier.bibliographicCitation | International Conference on Advanced Materials and Devices (ICAMD) 2017 | - |
| dc.relation.isPartOf | International Conference on Advanced Materials and Devices (ICAMD) 2017 | - |
| dc.relation.isPartOf | ICAMD 2017 Abstract | - |
| dc.citation.title | International Conference on Advanced Materials and Devices (ICAMD) 2017 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2017-12-05 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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