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Formation of Air Voids Incorporating AlN Buffer Layer on Patterned Sapphire Substrate for GaNbased Light Emitting Diode
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BYUN, Dong Jin | - |
| dc.date.accessioned | 2021-08-28T02:46:46Z | - |
| dc.date.available | 2021-08-28T02:46:46Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2017-11-23 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/20983 | - |
| dc.publisher | KIEEME | - |
| dc.title | Formation of Air Voids Incorporating AlN Buffer Layer on Patterned Sapphire Substrate for GaNbased Light Emitting Diode | - |
| dc.title.alternative | Formation of Air Voids Incorporating AlN Buffer Layer on Patterned Sapphire Substrate for GaNbased Light Emitting Diode | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | BYUN, Dong Jin | - |
| dc.identifier.bibliographicCitation | ICAE 2017 | - |
| dc.relation.isPartOf | ICAE 2017 | - |
| dc.relation.isPartOf | ICAE 2017 | - |
| dc.citation.title | ICAE 2017 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2017-11-21 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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