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Method of the high efficiency of reflection GaN layer for the lighting emitting diode structure including GaN/AlGaN films for the distributed bragg reflector

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dc.contributor.authorBYUN, Dong Jin-
dc.date.accessioned2021-08-28T02:50:39Z-
dc.date.available2021-08-28T02:50:39Z-
dc.date.created2021-04-22-
dc.date.issued2017-11-16-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/21115-
dc.publisher한국재료학회-
dc.titleMethod of the high efficiency of reflection GaN layer for the lighting emitting diode structure including GaN/AlGaN films for the distributed bragg reflector-
dc.title.alternativeMethod of the high efficiency of reflection GaN layer for the lighting emitting diode structure including GaN/AlGaN films for the distributed bragg reflector-
dc.typeConference-
dc.contributor.affiliatedAuthorBYUN, Dong Jin-
dc.identifier.bibliographicCitation2017년도 한국재료학회 추계학술대회-
dc.relation.isPartOf2017년도 한국재료학회 추계학술대회-
dc.relation.isPartOf2017년도 한국재료학회 추계학술대회-
dc.citation.title2017년도 한국재료학회 추계학술대회-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2017-11-15-
dc.type.rimsCONF-
dc.description.journalClass2-
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