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Department of Electronics and Information Engineering (전자및정보공학부)
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Selective Formation of InGaAs Quantum Dots by Melecular Beam Epitaxy
Formation of Silicon Nanocrystallites by Ion Beam Assisted Electron Beam Deposition
Selective Growth of Quantum Dots Using Oxide Mask Patterned by Electron Beam Lithography
Ripening in InGaAs Quantum Dots on Exact and Vicinal (100) Substrate
Selective Formationof InAs Quantum Dot Structure by Molecular Beam Epitaxy
Size Variation of InGaAs/GaAs Quantum Dots by Growth Interruption during MOCVD
Direct Patterning of Silicon Oxide Film by Electron Beam Lithography
Characteristics of GaN Microcrystal Formed by the Indirect Reaction of NH₃with GaAs-melt
Defect Study by Raman Spectroscopy for Nitrided GaAs Layer
Structural Study of a GaN Layer Grown on (001) GaAs by MOCVD
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Min, Suk Ki
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