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Pretreatment method by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate

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dc.contributor.authorBYUN, Dong Jin-
dc.date.accessioned2021-08-28T14:34:37Z-
dc.date.available2021-08-28T14:34:37Z-
dc.date.created2021-04-22-
dc.date.issued2016-08-25-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/27991-
dc.publisherThe Korean Cacuum Society-
dc.titlePretreatment method by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate-
dc.title.alternativePretreatment method by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate-
dc.typeConference-
dc.contributor.affiliatedAuthorBYUN, Dong Jin-
dc.identifier.bibliographicCitation20th International Vaccum Congress-
dc.relation.isPartOf20th International Vaccum Congress-
dc.relation.isPartOf20th International Vaccum Congress-
dc.citation.title20th International Vaccum Congress-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2016-08-21-
dc.type.rimsCONF-
dc.description.journalClass2-
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공과대학 (신소재공학부)
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