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Effect of 3/5 ratio and Al composition of AlGaN on GaN by MOCVDEffect of 3/5 ratio and Al composition of AlGaN on GaN by MOCVD
- Alternative Title
- Effect of 3/5 ratio and Al composition of AlGaN on GaN by MOCVD
- Authors
- BYUN, Dong Jin
- Issue Date
- 6-7월-2016
- Publisher
- 한국물리학회
- Citation
- The 18th international symposium on the physics of semiconductors and applications
- Conference Name
- The 18th international symposium on the physics of semiconductors and applications
- Place
- KO
- Conference Date
- 2016-07-03
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