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Temperature dependence of ZnO growth mechanism on Si(100) substrate by atomic layer deposition

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dc.contributor.authorBYUN, Dong Jin-
dc.date.accessioned2021-08-28T15:26:56Z-
dc.date.available2021-08-28T15:26:56Z-
dc.date.created2021-04-22-
dc.date.issued2016-07-06-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/28432-
dc.publisher한국물리학회-
dc.titleTemperature dependence of ZnO growth mechanism on Si(100) substrate by atomic layer deposition-
dc.title.alternativeTemperature dependence of ZnO growth mechanism on Si(100) substrate by atomic layer deposition-
dc.typeConference-
dc.contributor.affiliatedAuthorBYUN, Dong Jin-
dc.identifier.bibliographicCitationThe 18th international symposium on the physics of semiconductors and applications-
dc.relation.isPartOfThe 18th international symposium on the physics of semiconductors and applications-
dc.relation.isPartOfThe 18th international symposium on the physics of semiconductors and applications-
dc.citation.titleThe 18th international symposium on the physics of semiconductors and applications-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2016-07-03-
dc.type.rimsCONF-
dc.description.journalClass1-
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