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Passivation Properties of Hydrogenated Silicon Nitrides deposited by PECVD
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kang Yoon Mook | - |
| dc.date.accessioned | 2021-08-28T18:34:06Z | - |
| dc.date.available | 2021-08-28T18:34:06Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2016-02-19 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/30372 | - |
| dc.publisher | 한국진공학회 | - |
| dc.title | Passivation Properties of Hydrogenated Silicon Nitrides deposited by PECVD | - |
| dc.title.alternative | Passivation Properties of Hydrogenated Silicon Nitrides deposited by PECVD | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Kang Yoon Mook | - |
| dc.identifier.bibliographicCitation | 제50회 한국진공학회 | - |
| dc.relation.isPartOf | 제50회 한국진공학회 | - |
| dc.relation.isPartOf | 한국진공학회 | - |
| dc.citation.title | 제50회 한국진공학회 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2016-02-17 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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