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650V Silicon carbide MOSFET Edge Termination의 설계
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sung, Man Young | - |
| dc.date.accessioned | 2021-08-29T00:30:21Z | - |
| dc.date.available | 2021-08-29T00:30:21Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2015-06-25 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/33951 | - |
| dc.publisher | 전기전자재료학회 | - |
| dc.title | 650V Silicon carbide MOSFET Edge Termination의 설계 | - |
| dc.title.alternative | Design of 650V Silicon Carbide MOSFET Edge Termination | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Sung, Man Young | - |
| dc.identifier.bibliographicCitation | 한국전기전자재료학회 | - |
| dc.relation.isPartOf | 한국전기전자재료학회 | - |
| dc.relation.isPartOf | 전기전자재료학회 논문집 | - |
| dc.citation.title | 한국전기전자재료학회 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2015-06-24 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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